刘斌，本科毕业于中山大学理工学院，博士毕业于港澳宝典资料大全物理系微电子与固体电子学专业,其博士论文获得全国优秀博士论文提名奖，曾在英国谢菲尔德大学III-V族半导体国家研究中心、瑞典皇家工学院(KTH)、美国耶鲁大学，香港中文大学等访问研究，现任港澳宝典资料大全电子学院教授、博导，入选国家高层次人才计划、曾入选青长与优青，兼任教育部光电材料与芯片技术工程中心主任、港澳宝典资料大全国家级集成电路产教融合创新平台副主任，任科技部重点研发计划首席科学家，国家重大专项工程产品专家。主要研究领域为III族氮化物半导体材料与器件，Micro-LED新型显示技术，近年专注于氮化镓基Micro-LED材料生长、器件制备与机理研究，与华为、天马微电子等龙头企业合作开发高密度车载用Micro-LED芯片，量子点集成全色Micro-LED器件。主持国家重点研发专项项目与课题，国家自然科学基金委面上项目，江苏省前沿引领技术项目等12项，参加国家自然科学基金创新群体项目，科技部“973”、“863”计划等项目，成果发表于Nature Nanotechnology, Adv. Mater., Adv. Func. Mater.，IEEE EDL/T-ED/PTL等学术期刊，共计发表论文250余篇，申请/授权发明专利80余项，其中9项专利转让/许可，参编专著5部/章节；获国家教学成果二等奖1项，省部级科技成果奖3项。

1.宽带隙半导体材料及异质结构；2.III族氮化物半导体光电子器件；3.半导体固态照明与Micro-LED显示技术；4.Si与III-V族电子与光电子集成技术

本科生：《半导体物理与器件》、《半导体物理》、《科学之光》系列通识课程、《电子工程创新国际云科考课程》
 研究生：《高等半导体物理》、《基于先进制程的集成电路设计》

70.Three-dimensional monolithic micro-LED display driven by atomically thin transistor matrix.  NATURE NANOTECHNOLOGY (2021). https://doi.org/10.1038/s41565-021-00966-5 (共同通讯作者)

69. High-efficiency green micro-LEDs with GaN tunnel junctions grown hybrid by PA-MBE and MOCVD, PHOTONICS RESEARCH卷: 9 期: 9 文献号: 1683 出版年: 2021 (通讯作者)

68. Improved Optical Properties of Nonpolar AlGaN-Based Multiple Quantum Wells Emitting at 280 nm, IEEE PHOTONICS JOURNAL  卷: ‏ 13 期: 1 文献号: 2300107‏ 1出版年: 2021 (通讯作者)

67. Progress on AlGaN-based solar-blind ultraviolet photodetectors and focal plane arrays, LIGHT-SCIENCE & APPLICATIONS 卷:10 期:1  文献号:94  出版年: 2021 

66. Plasma assisted molecular beam epitaxy growth mechanism of AlGaN epilayers and strain relaxation on AlN templates, JAPANESE JOURNAL OF APPLIED PHYSICS, 卷:60 期:7 文献号:075504  出版年: 2021 (通讯作者)

65. Investigations of Sidewall Passivation Technology on the Optical Performance for Smaller Size GaN-Based Micro-LEDs, CRYSTALS 卷:11 期:4 文献号: 403, 出版年: 2021 (通讯作者)

64. 3.4-kV AlGaN/GaN Schottky Barrier Diode on Silicon Substrate With Engineered Anode Structure IEEE ELECTRON DEVICE LETTERS卷: ‏ 42期: ‏ 2页: ‏ 208-211出版年: ‏ 2021

63. 1 W/mm Output Power Density for H-Terminated Diamond MOSFETs With Al2O3/SiO2 Bi-Layer Passivation at 2 GHz.IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY卷: ‏ 9页: ‏ 160-164出版年: ‏2021 (通讯作者)

63.

2015-2020

62. Semi-polar (20-21) InGaN/GaN multiple quantum wells grown on patterned sapphire substrate with internal quantum efficiency up to 52 per cent/ APPLIED PHYSICS EXPRESS卷: ‏ 13期: ‏ 9 文献号: 091002 出版年: ‏ 2020 (通讯作者，Compound Semiconductor报道)

61.The optimization of surface plasmon coupling efficiency in InGaN/GaN nanowire based nanolasers/APPLIED PHYSICS EXPRESS  卷: ‏ 13   期: ‏ 8     文献号: 085001  出版年: ‏ 2020  (通讯作者，APEX Latest Spotlights)

60. Band Alignment and Interface Recombination in NiO/beta-Ga₂O₃ Type-II p-n Heterojunctions/IEEE TRANSACTIONS ON ELECTRON DEVICES   卷: ‏ 67   期: ‏ 8   页: ‏ 3341-3347   出版年: 2020

59. Hybrid Light Emitters and UV Solar-Blind Avalanche Photodiodes based on III-Nitride Semiconductors/ADVANCED MATERIALS  卷: ‏ 32   期: ‏ 27     文献号: 1904354   出版年: ‏ 2020 (第一作者)

58. Epsilon-Ga₂O₃: A Promising Candidate for High-electron-Mobility Transistors/IEEE ELECTRON DEVICE LETTERS 卷: ‏ 41期: ‏ 7页: ‏ 1052-1055出版年: ‏ 2020

57.Charge Transport in Vertical GaN Schottky Barrier Diodes: A Refined Physical Model for Conductive Dislocations/IEEE TRANSACTIONS ON ELECTRON DEVICES  卷: ‏ 67   期: ‏ 3   页: ‏ 841-846   出版年: 2020 (通讯作者)

56.High-Performance Semi-Polar InGaN/GaN Green Micro Light-Emitting Diodes/IEEE PHOTONICS JOURNAL  卷: ‏ 12   期: ‏ 1     出版年: 2020 (通讯作者)

55. Plasmon-enhanced photoelectrochemical water splitting by InGaN/GaN nano-photoanodes/ SEMICONDUCTOR SCIENCE AND TECHNOLOGY  卷: ‏ 35   期: ‏ 2     文献号: 025017   出版年: 2020 (通讯作者)

54. The influence of an AlN seeding layer on nucleation of self-assembled GaN nanowires on silicon substrates/ NANOTECHNOLOGY 卷: ‏ 31期: ‏ 4 文献号: 045604  出版年: 2020 (通讯作者)

53. Improvement of the interfaces in AlGaN/AlN superlattice grown by NH3 flow-rate modulation epitaxy/ APPLIED PHYSICS EXPRESS  卷: ‏ 13   期: ‏ 1     文献号: 015511   出版年: 2020 (通讯作者)

52. Improved Performance of Hybrid Organic/Inorganic p-n Heterojunction White Light-Emitting Diodes with 4,4 '-Cyclohexane-1,1-diylbis[N,N-bis(4-methylphenyl)aniline] as a Multifunctional Hole Transport Layer/PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE  卷: ‏ 217   期: ‏ 7   特刊: ‏ SI     文献号: 1900763   出版年:  2020 (通讯作者，封面高亮论文)

51. Electron-Beam-Driven III-Nitride Plasmonic Nanolasers in the Deep-UV and Visible Region/SMALL  卷: ‏ 16   期: ‏ 1     文献号: 1906205   出版年: ‏ 2020 (通讯作者，封面高亮论文—Small十周年推荐论文)

50. Synthesis and Properties of InGaN/GaN Multiple Quantum Well Nanowires on Si (111) by Molecular Beam Epitaxy/PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE  卷: ‏ 217   期: ‏ 7   特刊: ‏ SI     文献号: 1900729   出版年: 2020 (通讯作者，封面高亮论文)

49. Fabrication and Characterization of GaN-Based Micro-LEDs on Silicon Substrate/CHINESE PHYSICS LETTERS  卷: ‏ 36   期: ‏ 8     文献号: 088501   出版年: ‏ 2019(通讯作者)

48. A High-Performance SiO2/SiNx 1-D Photonic Crystal UV Filter Used for Solar-Blind Photodetectors /IEEE PHOTONICS JOURNAL  卷: ‏ 11   期: ‏ 4     文献号: 2201007   出版年: 2019

47. Observation and Modeling of Leakage Current in AlGaN Ultraviolet Light Emitting Diodes/ IEEE PHOTONICS TECHNOLOGY LETTERS   卷: ‏ 31   期: ‏ 21   页: ‏ 1697-1700   出版年: ‏ 2019 (通讯作者)

46. Electrically Injected Hybrid Organic/Inorganic III-Nitride White Light-Emitting Diodes Based on Rubrene/(InGaN/GaN) Multiple-Quantum-Wells P-N Junction/IEEE PHOTONICS JOURNAL  卷: ‏ 11   期: ‏ 4     文献号: 8200808   出版年: 2019 (通讯作者)

45. Single-crystal GaN layer converted from beta-Ga2O3 films and its application for free-standing GaN/ CRYSTENGCOMM   卷: ‏ 21   期: ‏ 8   页: ‏ 1224-1230   出版年: 2019

44. Homo-epitaxial growth of high crystal quality GaN thin films by plasma assisted-molecular beam epitaxy/ JOURNAL OF CRYSTAL GROWTH   卷: ‏ 506   页: ‏ 30-35   出版年: 2019 (通讯作者)

43. Hybrid Cyan Nitride/Red Phosphors White Light-Emitting Diodes With Micro-Hole Structures/IEEE PHOTONICS JOURNAL   卷: ‏ 10   期: ‏ 5     文献号: 8201608   出版年: 2018 (通讯作者)

42. Influence of high Mg doping on the microstructural and optoelectrical properties of AlGaN alloys/ SUPERLATTICES AND MICROSTRUCTURES   卷: ‏ 119   页: ‏ 150-156   出版年: 2018 (通讯作者)

41. Enhanced p-type conduction in AlGaN grown by metal-source flow-rate modulation epitaxy/ APPLIED PHYSICS LETTERS   卷: ‏ 113   期: ‏ 7     文献号: 072107   出版年: 2018 (通讯作者)

40. Tunneling-Hopping Transport Model for Reverse Leakage Current in InGaN/GaN Blue Light-Emitting Diodes/ IEEE PHOTONICS TECHNOLOGY LETTERS   卷: ‏ 29   期: ‏ 17   页: ‏ 1447-1450   出版年: 2017

39. Fabrication of AI GaN nanorods with different AI compositions for emission enhancement in UV range/ NANOTECHNOLOGY   卷: ‏ 28   期: ‏ 38     文献号: 385205   出版年: 2017 (通讯作者)

38. Manipulable and Hybridized, Ultralow-Threshold Lasing in a Plasmonic Laser Using Elliptical InGaN/GaN Nanorods/ ADVANCED FUNCTIONAL MATERIALS   卷: ‏ 27   期: ‏ 37     文献号: 1703198   出版年: ‏ 2017 (通讯作者，封面高亮论文)

37. Study of LED Thermal Resistance and TIM Evaluation Using LEDs With Built-in Sensor/ IEEE PHOTONICS TECHNOLOGY LETTERS   卷: ‏ 29   期: ‏ 21   页: ‏ 1856-1859   出版年: ‏ 2017

36. Polarized Emission From InGaN/GaN Single Nanorod Light-Emitting Diode/ IEEE PHOTONICS TECHNOLOGY LETTERS   卷: ‏ 28   期: ‏ 7   页: ‏ 721-724   出版年: 2016 (通讯作者)

35. Design and fabrication of UV band-pass filters based on SiO2/Si3N4 dielectric distributed bragg reflectors/ APPLIED SURFACE SCIENCE   卷: ‏ 364   页: ‏ 886-891   出版年: ‏ 2016  (通讯作者)

34. Great enhancement in the excitonic recombination and light extraction of highly ordered InGaN/GaN elliptic nanorod arrays on a wafer scale/ NANOTECHNOLOGY   卷: ‏ 27   期: ‏ 1   文献号: 015301   出版年: ‏ 2016 (通讯作者，封面高亮论文)

33. High Color Rendering Index Hybrid III-Nitride/Nanocrystals White Light-Emitting Diodes/ ADVANCED FUNCTIONAL MATERIALS   卷: ‏ 26   期: ‏ 1   页: ‏ 36-43   出版年: 2016(通讯作者，封面高亮论文)

32. Reverse leakage current characteristics of GaN/InGaN multiple quantum-wells blue and green light-emitting diodes/ IEEE PHOTONICS JOURNAL  卷: ‏ 8   期: ‏ 5     文献号: 1601606   出版年: 2016 (通讯作者)

31. Significant improvements in InGaN/GaN nano-photoelectrodes for hydrogen generation by structure and polarization optimization/ SCIENTIFIC REPORTS   卷: ‏ 6     文献号: 20218   出版年: 2016(通讯作者)

30. AlGaN-Based Multiple Quantum Well Deep Ultraviolet Light-Emitting Diodes With Polarization Doping/ IEEE PHOTONICS JOURNAL   卷: ‏ 8   期: ‏ 1     文献号: 1600207   出版年: 2016

29. Single nanowire green InGaN/GaN light emitting diodes/ NANOTECHNOLOGY  卷: ‏ 27   期: ‏ 43     文献号: 435205   出版年: 2016 (通讯作者)

28. Improvement of color conversion and efficiency droop in hybrid light-emitting diodes utilizing an efficient non-radiative resonant energy transfer/ APPLIED PHYSICS LETTERS  卷: ‏ 109   期: ‏ 14     文献号: 141105   出版年: 2016 (通讯作者)

27. In-Situ Measurement of Junction Temperature and Light Intensity of Light Emitting Diodes With an Internal Sensor Unit/IEEE ELECTRON DEVICE LETTERS   卷: ‏ 36   期: ‏ 10   页: ‏ 1082-1084   出版年: 2015

26. Investigation of surface-plasmon coupled red light emitting InGaN/GaN multi-quantum well with Ag nanostructures coated on GaN surface/JOURNAL OF APPLIED PHYSICS   卷: ‏ 117   期: ‏ 15     文献号: 153103   出版年: ‏ 2015 (通讯作者)

25. Optical polarization characteristics of c-plane InGaN/GaN asymmetric nanostructures/ JOURNAL OF APPLIED PHYSICS   卷: ‏ 118   期: ‏ 23     文献号: 233111   出版年: 2015 (通讯作者)

24. Asymmetric tunneling model of forward leakage current in GaN/InGaN light emitting diodes/AIP ADVANCES   卷: ‏ 5   期: ‏ 8     文献号: 087151   出版年: 2015 (通讯作者)

23. Enhanced opto-electrical properties of graphene electrode InGaN/GaN LEDs with a NiOx inter-layer/SOLID-STATE ELECTRONICS   卷: ‏ 109   页: ‏ 47-51   出版年: 2015 (通讯作者)

22. Enhanced non-radiative energy transfer in hybrid III-nitride structures/APPLIED PHYSICS LETTERS   卷: ‏ 107   期: ‏ 12    文献号: 121108  出版年: 2015

2015以前

21. Effect of the band structure of InGaN/GaN quantum well on the surface plasmon enhanced light-emitting diodes/JOURNAL OF APPLIED PHYSICS   卷: ‏ 116   期: ‏ 1     文献号: 013101   出版年: 2014 (通讯作者)

20. Temporally and spatially resolved photoluminescence investigation of (11(2)over-bar2) semi-polar InGaN/GaN multiple quantum wells grown on nanorod templates/APPLIED PHYSICS LETTERS   卷: ‏ 105   期: ‏ 26     文献号: 261103   出版年: 2014  (第一作者)

19. Large-scale fabrication and luminescence properties of GaN nanostructures by a soft UV-curing nanoimprint lithography/NANOTECHNOLOGY   卷: ‏ 24   期: ‏ 40     文献号: 405303   出版年: 2013 (通讯作者，封面高亮论文)

18. Exploitation of Polarization in Back-Illuminated AlGaN Avalanche Photodiodes/IEEE PHOTONICS TECHNOLOGY LETTERS   卷: ‏ 25   期: ‏ 15   页: ‏ 1510-1513   出版年: 2013 (通讯作者)

17. Great emission enhancement and excitonic recombination dynamics of InGaN/GaN nanorod structures/APPLIED PHYSICS LETTERS   卷: ‏ 103   期: ‏ 10     文献号: 101108   出版年: 2013 (第一作者)

16. Hybrid III-Nitride/Organic Semiconductor Nanostructure with High Efficiency Nonradiative Energy Transfer for White Light Emitters/NANO LETTERS   卷: ‏ 13   期: ‏ 7   页: ‏ 3042-3047   出版年: 2013

15. Improvements in Microstructure and Leakage Current of High-In-Content InGaN p-i-n Structure by Annealing/IEEE PHOTONICS TECHNOLOGY LETTERS   卷: ‏ 24   期: ‏ 17   页: ‏ 1478-1480   出版年: 2012  (通讯作者)

14. Magnetic and electrical properties of epsilon-Fe₃N on c-plane GaN/JOURNAL OF PHYSICS D-APPLIED PHYSICS   卷: ‏ 45   期: ‏ 31     文献号: 315002   出版年: 2012 (通讯作者)

13. Composition pulling effect and strain relief mechanism in AlGaN/AlN distributed Bragg reflectors/APPLIED PHYSICS LETTERS   卷: ‏ 98   期: ‏ 26     文献号: 261916   出版年: 2011 (第一作者)

12. Electron concentration dependence of exciton localization and freeze-out at local potential fluctuations in InN films/APPLIED PHYSICS A  卷: ‏ 99   期: ‏ 1   页: ‏ 139-143   出版年: 2010  (第一作者)

11. Polarization and temperature dependence of photoluminescence of m-plane GaN grown on gamma-LiAlO2 (100) substrate/APPLIED PHYSICS LETTERS   卷: ‏ 95   期: ‏ 6     文献号: 061905   出版年: 2009 (第一作者)

10. Improved Performances of InGaN Schottky Photodetectors by Inducing a Thin Insulator Layer and Mesa Process/IEEE ELECTRON DEVICE LETTERS   卷: ‏ 30   期: ‏ 6   页: ‏ 605-607   出版年: 2009

9. Design and Fabrication of AlGaN-Based Resonant-Cavity-Enhanced p-i-n UV PDs/ IEEE JOURNAL OF QUANTUM ELECTRONICS   卷: ‏ 45   期: ‏ 5-6   页: ‏ 575-578   出版年: 2009

8. Al incorporation, structural and optical properties of AlxGa1-xN (0.13 <= x <= 0.8) alloys grown by MOCVD/ JOURNAL OF CRYSTAL GROWTH   卷: ‏ 310   期: ‏ 21   页: ‏ 4499-4502   出版年: 2008 (第一作者)

7. Microstructure and dislocation of epitaxial InN films revealed by high resolution x-ray diffraction/JOURNAL OF APPLIED PHYSICS   卷: ‏ 103   期: ‏ 2     文献号: 023504   出版年: 2008 (第一作者)

6. Anisotropic crystallographic properties, strain, and their effects on band structure of m-plane GaN on LiAlO2(100)/ APPLIED PHYSICS LETTERS   卷: ‏ 92   期: ‏ 26     文献号: 261906   出版年: 2008 (第一作者)

5. Two-step growth of m-plane GaN epilayer on LiAlO2 (100) by metal-organic chemical vapor deposition/JOURNAL OF CRYSTAL GROWTH   卷: ‏ 298   特刊: ‏ SI   页: ‏ 228-231   出版年: 2007

4. The template effects on AlN/Al0.3Ga0.7N distributed Bragg reflectors grown by MOCVD/JOURNAL OF CRYSTAL GROWTH   卷: ‏ 298   特刊: ‏ SI   页: ‏ 357-360   出版年: 2007  (第一作者)

3. The high mobility InN film grown by MOCVD with GaN buffer layer/JOURNAL OF CRYSTAL GROWTH   卷: ‏ 298   特刊: ‏ SI   页: ‏ 409-412   出版年: ‏ 2007  

2. Nonpolar m-plane thin film GaN and InGaN/GaN light-emitting diodes on LiAlO2(100) substrates/APPLIED PHYSICS LETTERS   卷: ‏ 91   期: ‏ 25     文献号: 253506   出版年: 2007  (第一作者)

1. Comment on Radiative and nonradiative recombination process in InN films grown by metal organic chemical vapor deposition / APPLIED PHYSICS LETTERS   卷: ‏ 87   期: ‏ 17   文献号: 176101   出版年: 2005  (第一作者)