纪小丽

信息电子学系 博导

个人简历

1994年赴日本筑波大学留学,1998年3月获筑波大学工学博士学位。先后在中国科学技术大学,日本筑波大学、京都大学、日本Victor公司(JVC)等机构从事半导体材料和器件应用方面研究工作。现为港澳宝典资料大全港澳宝典资料大全教授、博士生导师。任职期间主持科研项目多项,并参加973和国家重大科学研究计划等课题研究。在Physical Review B, IEEE ACCESS, IEEE TED, Optical Express, Applied physics letter, 等学术期刊上发表论文50余篇,专利20多项。欢迎本科生,硕士和博士研究生加入本科研团队。

最新代表作:
1)QIXUAN YANG, XIAOLI JI*, YUE XU, AND FENG YAN,“Improved Performance of CMOS Terahertz Detectors by Reducing MOSFET Parasitic Capacitance”
IEEE ACCESS, Vol. 7 (2019)

2)JINLAN LI, ZHICHENG XU,PING HAN,JIANXIN CHEN,AND XIAOLI JI*, “Investigation of deep level defects on Beryllium compensation doping of In0.53Ga0.47As/GaAs0.49Sb0.51 type-II superlattice photodiodes“ OPTICS EXPRESS Vol. 26, No.12 (2018)

研究方向

1) CMOS传感器设计及其在太赫兹方向应用; 2)红外探测器工艺和器件物理;3)毫米波雷达组件。

主要课程

1)集成电路可靠性和失效分析(本科生);
2)模拟集成电路设计(本科生);
3)集成电路工艺、器件及表征(研究生)
4)信息电子学前沿实验 (本科生);

代表成果
  • Ming-Cheng Luo, Fang-Fang Ren,* Nikita Gagrani, Kai Qiu, Qianjin Wang, Le Yu, Jiandong Ye,* Feng Yan, Rong Zhang, Hark Hoe Tan, Chennupati Jagadish, and Xiaoli Ji*, Polarization-Independent Indium Phosphide Nanowire Photodetectors,Adv. Optical Mater.,2000514(2020)

  • CHENXU MENG,JINLAN LI,LE YU,XIAOMU WANG,PING HAN,FENG YAN,ZHICHENG XU,JIANXIN CHEN,AND XIAOLI JI* Investigation of a noise source and its impact on the photocurrent performance of long-wave-infrared InAs/GaSb type-II superlattice detectors; Optics Express  Vol. 28, No. 10,pp14753 (2020)

  • Jinlan Li, Chenxu Meng , Le Yu , Yun Li, Feng Yan , Ping Han,* and Xiaoli Ji* ,Effect of Various Defects on 4H-SiC Schottky Diode Performance and Its Relation to Epitaxial Growth Conditions。 MDPI Micromachines , 11, 609(2020);

  •  Ruizhi Huang, Xiaoli Ji*, Yiming Liao, Jingyu Peng, Ke Wang, Yue Xu, and Feng Yan, “Dual-frequency CMOS terahertz detector with silicon-based plasmonic antenna”, Optics Express  vol. 27, Issue 16, pp. 23250-23261(2019)

  •  Ze Shen, Xiaoli Ji*, Yiming Liao, Ke Wang, Biaobing Jin, Feng Yan, Resonant Polysilicon Antenna for Terahertz Detection, IEEE Photonics Journal, vol. 11, no. 4, pp. 1-8 (2019)

  • QIXUAN YANG, XIAOLI JI*, YUE XU, AND FENG YAN, Improved Performance of CMOS Terahertz Detectors by Reducing MOSFET Parasitic Capacitance  IEEE ACCESS  VOLUME 7, pp. 978(2019)

  • Jinlan Li, Yun Li, Ling Wang, Yue Xu, Ping Han and XiaoLi Ji, The influence of deep defects on electrical properties of Ni/4H-SiC Schottky diodes, Chinese Physics B28(2), 27303-027303 (2019).


联系方式
电话:025-89683965
邮件:[email protected]
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办公地址:仙林校区港澳宝典资料大全潘忠来楼232B
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