个人简历
1987-2001年就读于西北工业大学材料科学与工程系，并获博士学位，现为港澳宝典资料大全港澳宝典资料大全教授、博士生导师。2006年-2007年受哈佛大学GSAS资助在其工程与应用科学学院做邀请访问学者，2011年到瑞典皇家工学院做访问研究。2005年入选“教育部新世纪优秀人才计划”，2008年被评为港澳宝典资料大全中青年优秀学术带头人，2018年入选江苏省333工程第二层次培养计划。主要承担了国家自然科学基金面上/重点、国家863、973、重点研发计划等项目课题研究。发表SCI论文200余篇，获国家技术发明二等奖一项，教育部自然科学一等奖和科技发明一等奖各一项。担任Crystal Growth & Design，Applied Physics Letters，IEEE Electron Device Letters，Optics Express，IEEE Transactions on Electron Devices，Journal of Electronic Materials，Japanese Journal of Applied Physics，Chinese Physics Letter，Chinese Physics B等期刊审稿人。
研究方向
目前主要从事GaN基光电子探测器/传感器结构设计与器件工艺、GaN基异质结构设计与表征、GaN基电力电子器件及电源模块、器件物理与可靠性、新型低维半导体结构与器件等方面的研究。
代表成果
Ge M, Ruzzarin M, Chen DJ*, Lu H, Zhang R, Zheng YD, Gate reliability of p-GaN gate AlGaN/GaN high electron mobility transistors, IEEE Electron Device Letters 40: 397 (2019). Shao ZG, Chen DJ*, Lu H, R Zhang R, Zheng YD, High-gain AlGaN solar-blind avalanche photodiodes, IEEE Electron Device Letters 35: 372 (2014). Shao ZG, Chen DJ*, Liu YL, Lu H, R Zhang R, Zheng YD, Significant performance improvement in AlGaN solar-blind avalanche photodiodes by exploiting built-in polarization electric field, IEEE Journal of Selected Topics in Quantum Electronics 20: 3803306 (2014). Jia, XL, Chen DJ*, Lu H, Zhang R, Zheng YD, Ultrasensitive detection of phosphate using ion-imprinted polymer functionalized AlInN/GaN high electron mobility transistors, IEEE Electron Device Letters 37: 913 (2016). Wang J, You HF, Guo H, Chen DJ*, Liu B, Lu H, Zhang R, Zheng YD, Do all screw dislocations cause leakage in GaN-based devices, Applied Physics Letters 116:062104 (2020). Cai Q; Luo WK; Li,Q; Li M; Chen, DJ*; Lu, H; Zhang, R; Zheng, YD, AlGaN ultraviolet Avalanche photodiodes based on a triple-mesa structure. Applied Physics Letters, 113: 123503 (2018). Wang J; Yang GF; Xue JJ; Lei JM; Chen DJ*; Lu H; Zhang R; Zheng YD, A reusable and high sensitivity nitrogen dioxide sensor based on monolayer SnSe. IEEE Electron Device Letters 39: 599 (2018). Wang J, Guo H, Chen DJ*, Liu B, Lu H, Zhang R, Zheng YD, epsilon-GaO: A promising candidate for high electron mobility transitors, IEEE Electron Device Letters 41: 1052 (2020).
Huang Y，Chen DJ*, Lu H, Zhang R, Zheng YD, Li L, Chen C, Chen TS, Identifying Interface States in AlInN/GaN Heterostructure by Photocurrent Method，IEEE Electron Device Letters 32:1071 (2011). Qiao G, Cai Q, Ma TC, Wang J, Chen XH, Xu Y, Shao ZG, Ye JD, Chen DJ*, Nanoplasmonically Enhanced High-Performance Metastable Phase α-Ga2O3 Solar-Blind Photodetectors. ACS Applied Materials & Interfaces 11: 40283 (2019).
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