万昌锦
微电子与光电子学系 博士生导师
万昌锦微电子与光电子学系 博士生导师 |
个人简历
万昌锦,国家海外高层次青年人才,ScholarGPS全球前0.5%学者。2016年毕业于中科院宁波材料所获博士学位,随后在新加坡南洋理工大学从事博士后研究工作,师从新加坡科学院/工程院院士、南洋理工校长首席教授Xiaodong Chen。先后获得包括中科院院长奖、中科院优秀毕业生、中科院优秀博士论文等荣誉,Springer Nature 出版社颁发的“Springer Thesis Award”(该奖项每年在全球范围内仅遴选100篇左右),《Nano-Micro Letters》颁发的“新锐科学家奖”。出版英文专著(ISBN 978-981-13-3313-2)一部,自2019年出版以来迄今下载超2200次,成为该类丛书符合联合国可持续发展目标的热门书籍之一,也成为亚马逊上晶体管电气工程类十大畅销书(排名第三)。 本人是IEEE Member、ACS member、中国电子学会会员。多年来专注于神经形态器件及其类脑芯片这一交叉前沿研究领域,在该领域的理论研究和应用创新方面取得了一系列成果。迄今在相关领域发表SCI论文100多篇(其中12篇单篇引用>100),总引用次数超8000次,H-index 为42。担任International Journal of Extreme Manufacturing(IF=15.8)、Frontiers of Optoelectronics(IF=5.4)等杂志青年编委,是ACS NANO、Adv. Funct. Mater.、Adv. Electron. Mater.、IEEE Elctron Dev. Lett.、Appl. Phys. Lett.、Mater. Horiz.、Small等杂志审稿人。曾担任2022、2023届IEEE EDTM(电子器件技术与加工)学术会议组委会成员。主持和参与后摩尔时代重大计划培育项目、国家自然科学基金面上项目、科技部重点研发、科技部重点研发青年科学家、中央高校基本科研业务费等项目。 个人网站 https://scholar.google.com/citations?user=pvULvhUAAAAJ&hl=en 研究方向
1.新概念器件的神经形态计算及其工作机理研究 2.神经形态感知器件与系统构建 主要课程
《信息存储与新型人工智能器件》 代表成果
(★学科卓越,●学科一流) Selected papers in 2024
Selected papers in 2023
Selected papers in 2022 1.C. Chen, Y. He, H. Mao, L. Zhu, X. Wang, Y. Zhu, Y. Zhu, Y. Shi, C Wan*, and Q Wan*. A Photoelectric Spiking Neuron for Visual Depth Perception. Adv. Mater. 34, 2201895 (2022).★ 2.K. Shi, S. Heng, X. Wang, S. Liu, Ha. Cui, C. Chen, Y. Zhu, W. Xu, C. Wan* and Q. Wan*. An Oxide based Spiking Thermoreceptor for Low-power Thermography Edge Detection. IEEE Electron Dev. Lett. 43, 2196 (2022). ★ 3.Y. Zhu, B. Peng, L. Zhu, C. Chen, X. Wang, H. Mao, Y. Zhu, C. Fu, S. Ke, C. Wan*, and Q. Wan*. IGZO nanofiber photoelectric neuromorphic transistors with indium ratio tuned synaptic plasticity. Appl. Phys. Lett. 121, 133502 (2022).★ 4.Y. Zhu, H Mao, Y. Zhu, L. Zhu, C. Chen, X. Wang, S. Ke, C. Fu,C. Wan* and Q Wan*. Photoelectric Synapse Based on InGaZnO Nanofibers for High Precision Neuromorphic Computing. IEEE Electron Dev. Lett., 43, 651-654 (2022).★ 5.Y. Zhu, Y. He, C. Chen, L. Zhu, H. Mao, Y. Zhu, X. Wang, Y. Yang, C. Wan*, and Q. Wan*. HfZrOx-based Capacitive Synapses with Highly Linear and Symmetric Multilevel Characteristics for Neuromorphic Computing. Appl. Phys. Lett., 120, 113504 (2022).★ Selected papers in 2021 1.H. Mao, Y. He, C. Chen, L. Zhu, Y. Zhu, Y. Zhu, S. Ke, X. Wang, C. Wan* and Q. Wan*. Adv. Electron. Mater. 8, 2100918 (2021).★ 2.L. Zhu, Y. He, C. Chen, X. Wang, Y. Zhu, Y. Zhu, H. Mao, C. Wan*, and Q. Wan*. IEEE T. Electron. Dev., 68, 6154-6158 (2021).● Selected papers before 2021 1.C. Wan, P. Cai, X. Guo, M. Wang, N. Matsuhisa, L. Yang, Z. Lv, Y. Luo, X. J. Loh, and X. Chen*. Nature Communications 11, 4602 (2020). 2.K. Xiao#, C. Wan#, L. Jiang, M. Antonietti, and X. Chen*. Advanced Materials, 32, 2000218 (2020). 3.C. Wan, P. Cai, M. Wang, Y. Qian, W. Huang*, and X. Chen*. Advanced Materials, 1902434 (2019). 4.Y. Zhou#, C. Wan #, Y. Yang, H. Yang, S. Wang, X. Chen*, and Y. Long*. Advanced Functional Materials, 29, 1806220 (2018). 5.C. Wan, G. Chen, Y. Fu, M. Wang, N. Matsuhisa, S. Pan, L. Pan, H. Yang, Q. Wan, L. Zhu*, and X. Chen*. Advanced Materials, 30, 1801291 (2018). 6.C. Wan, Y. Liu, P. Feng, W. Wang*, L. Zhu, Z. Liu, Y. Shi*, and Q. Wan*. Advanced Materials 28, 5878-5885 (2016). 7.C. Wan, L. Zhu, Y. Liu, P. Feng, Z. Liu, H. Cao, P. Xiao, Y. Shi*, and Q. Wan*.. Advanced Materials. 28, 3557–3563 (2016). 8.C. Wan, L. Zhu, Y. Liu, Y. Shi*, and Q. Wan*. IEEE Electron Device Letters 35, 672-674 (2014). 9.C. Wan, J. Zhou, Y. Shi*, and Q. Wan*. IEEE Electron Device Letters 35, 414-416 (2014). 10.L. Zhu, C. Wan, L. Guo, Y. Shi*, and Q. Wan*. Nature Communications, 5, 3158 (2014). |
联系方式
电话:
邮件:cjwan at nju dot edu dot cn 信箱: 办公地址:电子楼 |
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