万昌锦，国家海外高层次青年人才，ScholarGPS全球前0.5%学者。2016年毕业于中科院宁波材料所获博士学位，随后在新加坡南洋理工大学从事博士后研究工作，师从新加坡科学院/工程院院士、南洋理工校长首席教授Xiaodong Chen。先后获得包括中科院院长奖、中科院优秀毕业生、中科院优秀博士论文等荣誉，Springer Nature 出版社颁发的“Springer Thesis Award”（该奖项每年在全球范围内仅遴选100篇左右）,《Nano-Micro Letters》颁发的“新锐科学家奖”。出版英文专著（ISBN 978-981-13-3313-2）一部，自2019年出版以来迄今下载超2200次，成为该类丛书符合联合国可持续发展目标的热门书籍之一，也成为亚马逊上晶体管电气工程类十大畅销书（排名第三）。

本人是IEEE Member、ACS member、中国电子学会会员。多年来专注于神经形态器件及其类脑芯片这一交叉前沿研究领域，在该领域的理论研究和应用创新方面取得了一系列成果。迄今在相关领域发表SCI论文100多篇(其中12篇单篇引用>100)，总引用次数超8000次，H-index 为42。担任International Journal of Extreme Manufacturing(IF=15.8)、Frontiers of Optoelectronics(IF=5.4)等杂志青年编委，是ACS NANO、Adv. Funct. Mater.、Adv. Electron. Mater.、IEEE Elctron Dev. Lett.、Appl. Phys. Lett.、Mater. Horiz.、Small等杂志审稿人。曾担任2022、2023届IEEE EDTM(电子器件技术与加工)学术会议组委会成员。主持和参与后摩尔时代重大计划培育项目、国家自然科学基金面上项目、科技部重点研发、科技部重点研发青年科学家、中央高校基本科研业务费等项目。

个人网站

https://scholar.google.com/citations?user=pvULvhUAAAAJ&hl=en

1.新概念器件的神经形态计算及其工作机理研究

2.神经形态感知器件与系统构建

《信息存储与新型人工智能器件》

(★学科卓越，●学科一流)

Selected papers in 2024

1. 1. C. Wan*, M. Pei, K. Shi, H. Cui, H., L. Qiao, Q. Xing, Q. Wan*. Toward a brain-neuromorphics interface. Adv. Mater. 2311288 (2024).★

2. 2. L. Qiao, S. Ke, K. Shi, Y. Zhu, H. Mao, J. Sun , Q. Wan, and C. Wan*. One-Transistor One-Memristor Based Universal Oscillating Units for Spike-Encoding Artificial Sensory Neuron. IEEE Electron Dev. Lett. 45, 1661-1664 (2024).★

3. 3. M. Xu, H. Long, C. Fu, H. Mao, C. Wan*, Q. Wan*. A Flexible Thermal-Coupled InGaZnO Adaptive Synapse. Appl. Phys. Lett.124, 163502 (2024).★

4. 4. B. Peng, Q. Sun, H. Long, K. Xu, L. Qiao, Z. Hu, C. Wan*, and Q. Wan*. A Fourier Neuromorphic Visual System based on InGaZnO Synaptic Transistor. Appl. Phys. Lett. 124, 032103 (2024).★

5. 5. Q. Xing, M. Pei, L. Qiao, B. Peng, K. Shi, X. Fang, H. Cui, C. Wan*, and Q. Wan*. Noise Robust Reservoir Computing based on Flexible Doped Hafnium Oxide Memcapacitors. IEEE T. Electron. Dev. 71, 2970-2975 (2024).(本科生一作)●

6. 6. L. Zhu*, S. Li, K. Shu, S. Ke, X. Wan, H. Sun, S. Yan, Y. Xu, C. L. Tan, G. He, Z. Yu*, and C. Wan*. Visible-light responsive CdS-QDs modified InGaZnO synapse for biologically plausible color-to-gray conversion. Appl. Phys. Lett. 125, 033502 (2024).★

Selected papers in 2023

1. 1. M. Pei, Y. Zhu, S. Liu, H. Cui, Y. Li, Y. Yan, Y. Li*, C. Wan*, Q. Wan*. Power-Efficient Multisensory Reservoir Computing based on Zr-doped HfO2 Memcapacitive Synapse Arrays. Adv. Mater. 202305609 (2023)★

   文章链接：https://doi.org/10.1002/adma.202305609

2. 2. X. Wang, C. Chen, L. Zhu, K. Shi, B. Peng, Y. Zhu, H. Mao, H. Long, S. Ke, C. Fu, Y Zhu, C Wan*, and Q. Wan*. Vertically

   integrated spiking cone photoreceptor arrays for color perception. Nat. Commun. 14, 3444 (2023)★

   文章链接： https://doi.org/10.1038/s41467-023-39143-8

   南大新闻网报道：https://news.nju.edu.cn/xsdt/20230613/i113578.html

   公众号报道：https://mp.weixin.qq.com/s/Cg9TDBKXdVZw4E5zFJq6mQ

3. 3. Y. Luo, ..., C. Wan, ... Technology Roadmap for Flexible Sensors. ACS Nano 17, 6, 5211–5295 (2023). ●

   与全球140多位科学家联合撰写，全文链接：https://doi.org/10.1021/acsnano.2c12606

   被多个公众号报道：https://mp.weixin.qq.com/s/4e8T1fdnxfYRDFQ-jKDHaA

   https://mp.weixin.qq.com/s/YUMtM1Bj42vURla0lO9DVQ

   https://mp.weixin.qq.com/s/vr8TjxFeLXF-eP2IsQiL_A

   https://mp.weixin.qq.com/s/mEQGY8sKs9tk034fH_3s0A

   https://mp.weixin.qq.com/s/c0DRQ--B0IpgAZ8BqGa-DQ

4. 4. S. Ke, F. W, C. Fu, H. Mao, Y. Zhu, X. Wang, C. Wan*, and Q. Wan*. Artificial Fear Neural Circuit Based on Noise Triboelectric Nanogenerator and Photoelectronic Neuromorphic Transistor. Appl. Phys. Lett. 123, 123501 (2023)★

5. 5. C. Fu, H. Cui, S. Ke, Y. Zhu, X. Wang, Y. Yang, C. Wan*, Q. Wan*. In2O3 Nanofiber Neuromorphic Transistors for Reservoir Computing. IEEE Electron Dev. Lett. 44, 1364-1367 (2023)★

6. 6. H. Mao, Y. Zhu, S. Ke, Y. Zhu, K. Shi, X. Wang, C. Wan*, and Q. Wan*. A Tunable Leaky Integrate-and-Fire Neuron Based  on one  Neuromorphic Transistor and one Memristor. Appl. Phys. Lett. 123, 013501 (2023).★

7. 7. H. Mao, Y. Zhu, Y. Zhu, B. Peng, C. Chen, L. Zhu, S. Ke, X. Wang, C. Wan*, and Q. Wan*. Amorphous indium–gallium–zinc oxide memristor arrays for parallel true random number generators. Appl. Phys. Lett. 122, 053503 (2023).★
   

8. 8. Y. Yang, H. Cui, S. Ke, M. Pei, K. Shi, C. Wan*, and Qing Wan*. Reservoir computing based on electric-double-layer coupled InGaZnO artificial synapse. Appl. Phys. Lett. 122, 043508 (2023).★

Selected papers in 2022

1.C. Chen, Y. He, H. Mao, L. Zhu, X. Wang, Y. Zhu, Y. Zhu, Y. Shi, C Wan*, and Q Wan*. A Photoelectric Spiking Neuron for Visual Depth Perception. Adv. Mater. 34, 2201895 (2022).★

2.K. Shi, S. Heng, X. Wang, S. Liu, Ha. Cui, C. Chen, Y. Zhu, W. Xu, C. Wan* and Q. Wan*. An Oxide based Spiking Thermoreceptor for Low-power Thermography Edge Detection. IEEE Electron Dev. Lett. 43, 2196 (2022). ★

3.Y. Zhu, B. Peng, L. Zhu, C. Chen, X. Wang, H. Mao, Y. Zhu, C. Fu, S. Ke, C. Wan*, and Q. Wan*. IGZO nanofiber photoelectric neuromorphic transistors with indium ratio tuned synaptic plasticity. Appl. Phys. Lett. 121, 133502 (2022).★

4.Y. Zhu, H Mao, Y. Zhu, L. Zhu, C. Chen, X. Wang, S. Ke, C. Fu,C. Wan* and Q Wan*. Photoelectric Synapse Based on InGaZnO Nanofibers for High Precision Neuromorphic Computing. IEEE Electron Dev. Lett., 43, 651-654 (2022).★

5.Y. Zhu, Y. He, C. Chen, L. Zhu, H. Mao, Y. Zhu, X. Wang, Y. Yang, C. Wan*, and Q. Wan*. HfZrOx-based Capacitive Synapses with Highly Linear and Symmetric Multilevel Characteristics for Neuromorphic Computing. Appl. Phys. Lett., 120, 113504 (2022).★

Selected papers in 2021

1.H. Mao, Y. He, C. Chen, L. Zhu, Y. Zhu, Y. Zhu, S. Ke, X. Wang, C. Wan* and Q. Wan*. Adv. Electron. Mater. 8, 2100918 (2021).★

2.L. Zhu, Y. He, C. Chen, X. Wang, Y. Zhu, Y. Zhu, H. Mao, C. Wan*, and Q. Wan*. IEEE T. Electron. Dev., 68, 6154-6158 (2021).●

Selected papers before 2021

1.C. Wan, P. Cai, X. Guo, M. Wang, N. Matsuhisa, L. Yang, Z. Lv, Y. Luo, X. J. Loh, and X. Chen*. Nature Communications 11, 4602 (2020).

2.K. Xiao#, C. Wan#, L. Jiang, M. Antonietti, and X. Chen*. Advanced Materials, 32, 2000218 (2020).

3.C. Wan, P. Cai, M. Wang, Y. Qian, W. Huang*, and X. Chen*. Advanced Materials, 1902434 (2019).

4.Y. Zhou#, C. Wan #, Y. Yang, H. Yang, S. Wang, X. Chen*, and Y. Long*. Advanced Functional Materials, 29, 1806220 (2018).

5.C. Wan, G. Chen, Y. Fu, M. Wang, N. Matsuhisa, S. Pan, L. Pan, H. Yang, Q. Wan, L. Zhu*, and X. Chen*. Advanced Materials, 30, 1801291 (2018).

6.C. Wan, Y. Liu, P. Feng, W. Wang*, L. Zhu, Z. Liu, Y. Shi*, and Q. Wan*. Advanced Materials 28, 5878-5885 (2016).

7.C. Wan, L. Zhu, Y. Liu, P. Feng, Z. Liu, H. Cao, P. Xiao, Y. Shi*, and Q. Wan*.. Advanced Materials. 28, 3557–3563 (2016).

8.C. Wan, L. Zhu, Y. Liu, Y. Shi*, and Q. Wan*. IEEE Electron Device Letters 35, 672-674 (2014).

9.C. Wan, J. Zhou, Y. Shi*, and Q. Wan*. IEEE Electron Device Letters 35, 414-416 (2014).

10.L. Zhu, C. Wan, L. Guo, Y. Shi*, and Q. Wan*. Nature Communications, 5, 3158 (2014).